Ishidi le-transistors: isihluthulelo sokukala ngaphezu kuka-2 nm

Imboni ye-semiconductor ibhekene nesikhathi esibalulekile: Ama-forkeshi e-transistor angene kuwo wonke amamephu emigwaqo Abakhiqizi abahamba phambili babona lokhu njengesinyathelo esikhulu esilandelayo sokuqhubekela phambili sokukhulisa ngale kwama-nanosheet e-GAA ajwayelekile. Futhi akuyona into eyenzekile ngengozi: i-node ngayinye entsha ibiza kakhulu, iyinkimbinkimbi kakhulu, futhi ibucayi kakhulu, ngakho-ke noma yiluphi ulwakhiwo olucindezela ubuningi, ukusebenza, kanye nokusebenza kahle ngaphandle kwezindleko ezikhuphuka ngokuzenzakalelayo luba ngumdlali obalulekile.

Ngaphakathi kwalesi simo, I-Samsung, i-Intel, i-TSMC, kanye ne-imec zihamba ngesivinini esigcwele ukuchaza ukuthi ama-node angu-2 nm, 1 nm, kanye nezizukulwane ze-angstrom zesikhathi esizayo (A14, A10, A7, njll.) azoba njani. Kule nqubo, i-forksheet ihloselwe ukuba "isinyathelo esiphakathi esihlakaniphile" phakathi kwama-GAA e-nanosheet amanje kanye nama-CFET esikhathi esizayo (ama-FET ahambisanayo), okuzofika lapho ukuhlanganiswa okuqondile kwamadivayisi e-nanop abekwe phezu komunye nomunye kuba ngokoqobo kwezimboni hhayi nje umsebenzi welabhorethri.

Iyini i-transistor forksheet futhi kungani ibaluleke kangaka?

I-transistor ye-forksheet iyinguquko eqondile ye-transistor ye-GAA nanosheet.Yakhelwe ukukhulisa i-logic kanye nobuningi be-SRAM ngaphandle kokudinga ukwakhiwa kabusha okuphelele kwenqubo yokukhiqiza, isihluthulelo sisekwethuleni udonga lwe-dielectric oluhlelekile oluvumela ama-transistors e-nMOS kanye ne-pMOS ukuthi abekwe eduze kakhulu ngaphandle kokubangela amandla e-parasitic.

Kuma-nanosheet avamile e-GAA, Umkhawulo awuveli kakhulu esiteshini ngokwaso kodwa uvela ebangeni eliphakathi kwamadivayisi ahambisanayo. ezakha isango le-CMOS logic. Uma zibekwe eduze kakhulu, amandla okusebenza phakathi kwezindawo ze-N/P ayanda kakhulu, ehlisa ukusebenza, andise ukusetshenziswa kwamandla, futhi angcolise isignali. Leli banga elincane laliba yisithiyo sangempela sokunciphisa usayizi wamaseli ajwayelekile.

I-Imec, ebilokhu ihola phambili ocwaningweni lwamadivayisi oluthuthukisiwe iminyaka eminingi, yaqala ukutadisha ukuthi ukusabalala kwama-nanosheet kwaqala kuphi "ukuwohloka". Umphumela walezo zifundo kwaba umbono we-forksheetEsikhundleni sokushiya isikhala phakathi kwama-transistors ahambisanayo "sidaluliwe," kwethulwa udonga oluvikelayo oluhlukanisa ngokoqobo izindawo zamadivayisi ohlobo olufanayo, kuye ngokuthi yiluphi uhlobo.

Emcabangweni wayo wokuqala, Ishidi lefoloko libeke udonga lwangaphakathi lwe-dielectric phakathi kwe-nMOS ne-pMOS ngaphakathi kweseli elifanayo elijwayelekile. Lolu donga luvumela ama-transistors amabili ukuthi abekwe eduze kakhulu ngaphandle kokukhulisa kakhulu amandla, ngoba lusebenza njengesivikelo sikagesi phakathi kwamasango nezindawo ezisebenzayo. Ngakho-ke, umklami ubhekene nezinketho ezimbili: ukunciphisa indawo yeseli ukuze ivumelane ne-logic eyengeziwe nge-millimeter yesikwele noma ukusebenzisa isikhala "esingeziwe" ukwandisa ama-nanosheet nokuthola ukusebenza.

Izinombolo imboni ebhekana nazo azibalulekile: Ngokusho kokulingisa, uma kuqhathaniswa ne-nanosheet yakudala ye-GAAUmklamo we-forksheet ungafinyelela ukusebenza okuphezulu okufika ku-10%, ukuthuthukiswa kokusetshenziswa kwamandla okucishe kube ngu-24%, kanye nokwehla kwendawo yeseli cishe ngo-20%. Konke lokhu ngenkathi kugcinwa ingxenye enkulu yezinyathelo zenqubo esezivele ziqondiwe kuma-nanosheet.

Kusukela ku-FinFET kuya ku-GAA kanye nokusuka ku-GAA kuya ephepheni lokufaka: isinyathelo esilandelayo

Ukuze siqonde ukuthi i-forksheet ingena kuphi, sidinga ukubheka emuva isikhashana. Lapho ama-FinFET efika emakethe, axazulula inkinga yokulawula iziteshi. ukuthi ama-transistors e-planar ahlupheke njengoba i-node incipha. "I-fin" noma i-fin yaphakamisa isiteshi ku-3D futhi isango labamba izinhlangothi ezintathu, lithuthukisa ukulawulwa kwe-electrostatic futhi linciphisa ukuvuza.

Igxathu elilandelayo kube yisango elizungezile (i-GAA), lapho Isiteshi asiseyona i-fin kodwa amashidi amaningana e-silicon avundlile ahlanganisiweizungezwe ngokuphelele yisango. Lokhu kuqinisa kakhulu ukulawulwa kwesiteshi futhi kuvumela ukukala kube yi-3nm, 2nm, nangaphezulu. I-Intel, i-TSMC, ne-Samsung ziphakathi kokushintshela kulolu hlaka lwama-node azo e-Intel 18A, TSMC N2, kanye ne-Samsung SF3E, phakathi kwezinye.

Kodwa-ke, ngisho ne-GAA enama-nanosheet inosuku lokuphelelwa yisikhathi. Isifiso esikhulu semboni ye-logic yi-CFETlapho ama-transistors e-nyp ebekwe phezulu komunye nomunye, ukuze, ezingeni lesitshalo, athathe indawo yedivayisi eyodwa. Lokhu kunganciphisa cishe indawo yamaseli athile abalulekile futhi kuhlinzeke ngentuthuko enkulu ekuxineni kanye ne-PPA (amandla, ukusebenza, indawo).

Inkinga ukuthi I-CFET iyiphupho elibi lokuhlanganisa abantu.Kudinga ukulawulwa okunembile kwezinto kanye nokuqondaniswa okunembile kakhulu phakathi kwamadivayisi ahlanganisiwe, kanye nokuhlelwa kwenqubo okubucayi kakhulu ukuze kugwenywe ukulimaza ama-transistors angezansi ngenkathi kukhiqizwa lawo angenhla. Yingakho i-imec nabanye abadlali bebheka i-forksheet njengesinyathelo esiphakathi esifanele: isebenzisa kabusha iningi le-GAA flux, inezela udonga lwe-dielectric, futhi ithuthukisa ubuningi ngaphandle kokwenza igxathu ekuhlanganisweni okuqondile okugcwele.

Ngokombono wesikhashana, I-IMEC ibeka i-forksheet njengento ebaluleke kakhulu ekupheleni kwale minyaka eyishumi, ngenhloso yokukhiqiza cishe ngo-2028, kuyilapho i-CFET ephezulu izoba sekulungele ekuqaleni kwawo-30, kanti ukuvuthwa kokukhiqiza kwezimboni cishe ngo-2032 ngokusho kwezilinganiso zabo.

Umbono we-Samsung: i-forksheet izofinyelela ku-1nm

I-Samsung Foundry ayisagcini nje ngokuncintisana ne-node nge-node ne-TSMC noma ukuphishekela umugqa wesikhathi we-Intel; AmaKorea abeke umbono wawo ngokucacile ku-node ye-1 nm cishe ngo-2031, futhi i-forksheet iyingxenye ebalulekile yesu layo. Le nkampani ifuna ukugxila kakhulu ekubuthweni kwabantu, ukusebenza kahle, kanye nokusebenza kahle, yize i-TSMC izoqhubeka nokuhola ngobuningi.

Kulolu hlelo, I-Samsung ihlela ukusebenzisa ama-transistors anobubanzi besiteshi obuseduze ne-1 nmokulingana nama-athomu angaba mahlanu. Lokhu akusikho nje ukwehla okuqhubekayo kusuka ku-2 nm, kodwa umngcele wangempela wamanje ongokoqobo maqondana nokulawulwa kwesiteshi, ukuphathwa kwezinto, kanye nokuguquguquka kwezibalo phakathi kwedivayisi nedivayisi.

Indlela ye-forksheet ye-Samsung ifuna nciphisa isikhala phakathi kwama-transistors Sisebenzisa imikhawulo yezikena ze-lithographic zamanje, kungeniswa "udonga" oluvikelayo phakathi kwamadivayisi ukuze lulawule ukusebenzisana kukagesi phakathi kwawo, okwandisa kakhulu ubuningi bendawo ngayinye. Ukuhlukana okuncane ngokomzimba kusho ama-transistors amaningi endaweni efanayo, kodwa futhi kudinga kakhulu ukulawula ukuvuza nokuxhumanisa; yingakho udonga lwe-dielectric lubalulekile.

Kuze kube manje, ukweqa kusuka ku-FinFET kuya ku-GAA kwase kuvumele kakade intuthuko ephawulekayo ekusebenzeni kahle kwamandlaIsiteshi, esizungezwe izinhlangothi ezine, sinciphisa ukuvuza uma kuqhathaniswa nesango le-FinFET elinezinhlangothi ezintathu. I-forksheet yengeza ukuthuthukiswa okwengeziwe ngokubhekana nenye yezingqinamba ezinkulu: ibanga elingokoqobo phakathi kwamadivayisi e-nyp ngaphakathi kweseli. Ukuze kukhuliswe ngaphezu kwe-2 nm ngaphandle kokubeka engcupheni ukusetshenziswa kwamandla noma ukusebenza, lolu hlobo lwezixazululo ezinolaka luba lubalulekile.

Emakethe, I-Samsung isalokhu iyisidlali sesibili esikhulu emisebenzini yokukhiqiza izinsimbi. Ngokuphathelene nomthamo, i-TSMC isebenza kwelinye iqembu elihlukile elinesabelo semakethe somhlaba esingaphezu kuka-70%. Noma kunjalo, amaKorea asebenzise ubuchwepheshe obusha ngesikhathi esifanele: ayengawokuqala ukwethula i-EUV endaweni yawo ye-7nm kanye nawokuqala ukufaka i-GAA ekukhiqizweni ku-3nm. Lokhu akubanikezi ubuholi bemali engenayo, kodwa kuqinisekisile ukuba khona okuqhubekayo engxoxweni yobuchwepheshe.

I-node engu-1 nm ene-forksheet kufanele ibhekwe, okwamanje, njengoba uphawu lwendawo kanye nesifiso sobuchwepheshe Esikhundleni sokukubona njengento ezogcwala imakethe ngokushesha, inselele yangempela izoba ukuguqula leyo nzuzo yethiyori ngobuningi kanye ne-PPP ibe ukukhiqizwa kwangempela ngenzuzo efanelekile kanye nezindleko ezingabizi. Yilapho, ngokomlando, abawinile bangempela benqunywa khona: hhayi ezethulweni zengqungquthela, kodwa efektri.

Udonga lwangaphakathi nodonga lwangaphandle: ukuvela komklamo we-forksheet

Lapho i-imec yethula umqondo we-forksheet ngo-2017, Ukwakhiwa kokuqala kwakusekelwe “odongeni olungaphakathi” Njengoba yayitholakala phakathi kwamadivayisi e-nMOS kanye ne-pMOS ngaphakathi kweseli elijwayelekile, udonga oluvikelayo lwethulwa ekuqaleni kokugeleza, ngaphambi kwephethini yesango, futhi kusukela ngaleso sikhathi kuqhubeke kwadingeka ukuthi luphile izinyathelo eziningi zokucubungula: ukuqopha okukhethiwe, ukufakwa kwe-dielectrics ehlukene, ukwelashwa kokushisa, njll.

Le ndlela iveze ubunzima obuningi obukhulu. Ububanzi balolo donga kwakufanele bube buncane kakhulungo-oda oluyi-8 kuya ku-10 nm, uma ukuphakama kweseli okungaba ngu-90 nm bekufanele kugcinwe. Njengoba udonga oluncane kangaka luvezwe ezinyathelweni eziningi ezilandelayo, noma yikuphi ukuhlaselwa okuncane kakhulu noma kwamakhemikhali kungaluguguleka ngokungalawuleki. Lokhu kwabeka izidingo eziqinile kakhulu ezintweni ze-dielectric kanye nokubekezelelana kwenqubo.

Futhi, Emiklamo eminingi ye-logic, amasango ama-transistors e-np abelana ngengxenye yomkhondo.Ngokubeka isithiyo esiqinile phakathi kwabo, lokhu kuxhumana kuba nzima: noma ngabe umnyango kufanele "ugxume" phezu kodonga, okwengeza amandla angafuneki e-parasitic, noma kudingeka izixazululo ezengeziwe ezingavamile zomzila ezigcina zijezisa ukusebenza nendawo.

Elinye iphuzu elibucayi le-forksheet yodonga lwangaphakathi kwakuyisilawuli sesiteshi. I-geometry yesango ekuqalisweni kokuqala yayihlanganisa izinhlangothi ezintathu kuphela zesiteshiNgakho-ke, ukulawulwa kwe-electrostatic kwakungekuhle njengokwencwadi yesifundo i-GAA. Njengoba ubude beziteshi buqhubeka nokwehla, lokhu kulahlekelwa kokulawula okuhlobene kuba yinkinga enkulu.

Ibhekene nalezi mikhawulo, i-imec ithathe indlela entsha ngenguqulo entsha ebizwa ngokuthi “ishidi lodonga lwangaphandle”Kule nguqulo, udonga oluvikelayo manje selutholakala emaphethelweni eseli elijwayelekile, luhlukanisa amadivayisi ohlobo olufanayo olungolwamaseli aseduze, esikhundleni sokufaka isithiyo ngaphakathi kweseli uqobo phakathi kwe-nMOS ne-pMOS. Lokhu kushintsha kakhulu indlela yokuhlanganisa.

Lapho udweba udonga oluya ngaphandle, Ububanzi bayo bungandiswa bube cishe yi-15 nm ngaphandle kokujezisa ukuphakama kweseli iyonke.Lokhu kuvumela ukuthi yakhiwe ngezinto namathuluzi aziwayo, njenge-silicon dioxide, futhi, ngaphezu kwakho konke, ukuthi yethulwe kamuva ochungechungeni lokukhiqiza, uma izinyathelo ezibalulekile njengokwakheka komthombo/i-drain noma ukukhishwa kwe-nanosheet seziqediwe. Ngokungena ekugelezeni kamuva, udonga luvezwa izinqubo ezimbalwa ezinolaka, okwenza kube lula ukugcina ubuqotho balo.

Izinzuzo zeforksheet yodonga lwangaphandle: ukulawula okungcono kanye nokukhiqizwa okulula

Ukuhambisa udonga ephepheni lodonga lwangaphandle akugcini nje ngokuthuthukisa ukwenziwa, Futhi kwenza kube lula ukuhlanganiswa kwesango le-transistor.Manje isango linganwetshwa njalo phezu kwamadivayisi e-nyp ngaphandle kokuwela isithiyo phakathi kweseli, kunciphisa ubunzima bomzila futhi kugwenywe ukwengeza amandla angadingekile e-parasitic.

Elinye icebo elithakazelisayo le-forksheet yangaphandle yodonga ukuthi nciphisa udonga kancane ekupheleni kwenquboUma, ezinyathelweni zokugcina, cishe u-5 nm walolo donga ususiwe, isango lingagoqa ingxenye enkulu yesiteshi, liphinde lilulame futhi lithuthukise nokulawula kwe-electrostatic uma kuqhathaniswa nokwehlukile kwangaphambilini. Ukulingisa okwethulwe yi-imec kubonisa ukwanda okungu-25% ku-conduction current ngenxa yalokhu kuthuthukiswa kokuxhumanisa isiteshi nesiteshi.

Umklamo omusha uphinde uxazulule inkinga yakudala yama-nanosheet kanye nesizukulwane sokuqala sama-forksheet: ukuqhubeka kokucindezeleka komshini (ukucindezeleka) esiteshiniPhakathi nenqubo, imaski evikelayo imboza indawo lapho udonga lwangaphandle luzokwakheka khona kamuva, ngakho-ke i-silicon ngaphansi kwemaski ihlala iyibhulokhi eqhubekayo yekristalu. Lokhu kuvumela izinto zomthombo/zokukhipha amanzi ezibangela ukucindezeleka—isibonelo, i-silicon-germanium ye-pMOS—ukudlulisa ukucindezeleka ngendlela ephumelela kakhulu esiteshini.

Ezakhiweni zangaphambilini, ngokuphazamiseka okuqondile kanye nokungaqhubeki, Lowo mzamo wokusebenza wehliswa ukungalingani kanye nokukhubazekaUmphumela waba ukwehla kokuhamba kwenethiwekhi, ngakho-ke, ugesi omncane we-voltage efanayo. I-forksheet yangaphandle yodonga igwema kakhulu lezi zinkinga, okuvumela ukusetshenziswa kokucindezeleka okufanayo nokuhlelekile.

Ukulingisa ezinkumbulo ze-SRAM kanye nama-oscillator kuqinisekisa lokho endaweni engu-A10 (cishe ama-1 nm / 10 angstroms), lolu hlelo olusha lungafinyelela ukwehla kwendawo yeseli cishe ngo-22% uma kuqhathaniswa nemiklamo ye-A14 esekelwe ku-nanosheet, kusetshenziswa i-pitch yesango eqinile kanye nokupakisha okuxineneyo kwamadivayisi afanayo. Kumasekethe e-oscillator, lapho kusetshenziswa ukucindezeleka okugcwele, ukusebenza kwe-forksheet yangaphandle yodonga kufana noma kudlula lokho kwemiklamo elinganayo ye-A14 kanye ne-2 nm; ngaphandle kokucindezeleka, ugesi wokuqhuba wehla cishe ngo-33%, okugqamisa ukubaluleka kwalesi sici.

Ngale kwezibalo ezithile, Inzuzo enkulu yeforksheet yangaphandle ukuthi iphinda isebenzise ingxenye enhle yolwazi lwe-nanosheetIsebenzisa izinto ezijwayelekile, imishini ekhona emafektri amanje, kanye nokulandelana kwezinqubo okungadingi ukwakha kabusha sonke isitshalo. Lokhu kunciphisa ubungozi, izindleko, kanye nesikhathi sokuvuthwa uma kuqhathaniswa nezinye izindlela eziphazamisayo.

Izinselele ze-Metrology kanye namaphutha ezakhiweni ze-forksheet

Njengoba izakhiwo ze-transistor ziba zincane futhi ziyinkimbinkimbi kakhulu, Ukutholwa kwamaphutha kuba yikhanda elibi kakhuluKu-CMOS yesizukulwane esilandelayo, inselele akuseyona nje "yokwenza i-transistor," kodwa ukukwazi ukubona nokukala ngokunembile amaphutha amancane esakhiweni anomthelela omkhulu ekuziphatheni kukagesi.

Uma kwenzeka ama-FET e-forksheet, yize ubuningi, ukusebenza, kanye nokusebenza kahle kwethiyori kuyazuzwa.Usayizi ophelele wamaphutha ajwayelekile (ubulukhuni bomugqa, ukuphambuka kwephimbo, ukugoba, ukungalingani kwephrofayili, njll.) awunciphi ngesilinganiso esifanayo nobukhulu obujwayelekile bedivayisi. Lokhu kusho ukuthi noma yikuphi ukungafani okuncane kuthatha, ngokwemibandela ethile, ingxenye enkulu ye-transistor, enemiphumela evelele kakhulu.

Kulomongo, Amasu okukala amazinga e-metrology akudala awaphumeleli ukuze kuchazwe ngokwanele lezi zakhiwo ezintsha. Ngaphakathi kwephrojekthi ye-IT2 yaseYurophu, inkampani i-Semilab kanye nochwepheshe bayo ku-ellipsometry ye-spectroscopic bathuthukise izindlela ze-ellipsometry ezijwayelekile futhi, ikakhulukazi, bahlole ukusetshenziswa kwe-Mueller Matrix Ellipsometry ukuthola ukungalingani kwesakhiwo kuma-formorksheet FET arrays.

Umqondo uyadlula linganisa izilinganiso ze-Mueller matrix ngaphansi kwamazinga ahlukene neziqondiso ze-asymmetries Kuphrofayili ye-forksheet: ukuhlukahluka okucashile emthambekeni wodonga, umehluko phakathi kwamagatsha, ukugoba okuncane, noma ukungalungi kahle. Kusukela kulezi zifaniso, izinga lapho izimpendulo ezibonakalayo ezihlobene nohlobo ngalunye lwesici zingahlukaniswa khona komunye nomunye liyalinganiswa, futhi ukuhlangana phakathi kwamapharamitha e-asymmetry kubalwa.

Isici esibalulekile kulolu hlobo lokulinganisa okuthuthukisiwe kokukhanya yi- ukuqondanisa okunembile kwesampulaIphutha elincane ekubekeni lingafihla noma lilingise ukungalingani okuthile, ngakho ingxenye yomsebenzi igxile ekuqondeni ukuthi ukungaqiniseki kokuqondanisa kuthinta kanjani izilinganiso kanye nokuklama izindlela zokuhlunga noma zokulungisa lokho.

Lezi zinhlobo zentuthuko ziyisisekelo embonini yaseYurophu, ehlose ukuqinisa indima yayo njengomdlali wezobuchwepheshe ofanele kuma-semiconductorsNgaphandle kokukhiqiza ama-node athuthuke kakhulu, amaphrojekthi afana nalawa ahlinzeka ngamathuluzi okuchaza kanye nolwazi lwenqubo oluvumela ukuhluza ukukhiqiza kanye nokuthuthukisa ukusebenza kwamadivayisi ayinkimbinkimbi kakhulu, kufaka phakathi ama-forksheet.

I-Forksheet njengebhuloho eliya kuma-CFET kanye nekusasa elingaphezu kuka-2 nm

Abakhiqizi be-logic abahamba phambili bayavuma ukuthi I-GAA esekelwe ku-Nanosheet ayikwazi ukwelulwa unomphela. ngemva kwezizukulwane ezimbalwa. Njengoba ama-node eba mancane—2 nm, A14, A10, nanoma yini elandelayo—izikhonkwane zokukala kwejometri kuphela ziyaphela, futhi kudingeka izinguquko ezinkulu zokwakha; izidingo ezifana i-quantum computing Ziyisibonelo sokuthi kungani kufunwa izindlela ezintsha zobuningi nokusebenza.

Kuleso simo, I-CFET ibonakala “njengomklamo wokugcina we-CMOS” Ngokuhamba kwesikhathi, ngokusho kochwepheshe be-IMEC, ukufaka i-transistor ye-N ne-P ngokuqondile kunciphisa kakhulu indawo yamabhulokhi athile e-logic kanye nememori, kwandisa ubuningi ngaphandle kokusunduza iphimbo eliseceleni liye emikhawulweni engenakwenzeka.

Kodwa, njengoba sekushiwo kakade, Ukuhlanganiswa kwe-CFET kuyinkimbinkimbi kakhuluUkuxhumana, ukungezwani, ukuhambisana, kanye nezinyathelo zenqubo kumele kulawulwe ngezinga lokunemba elidlula kakhulu lokho okujwayelekile njengamanje. Ngakho-ke, imboni idinga ushintsho oluhamba kancane oluyivumela ukuthi ifunde, ekukhiqizeni, ukuthi ingaphatha kanjani izakhiwo ezihlanganisiwe kanye nezindonga ezibalulekile ze-dielectric ngaphandle kokuthembela ngokuphelele kubuchwepheshe obusafufusa.

Ama-forksheet, ikakhulukazi uhlobo lodonga lwangaphandle, angena ngqo kulesi sikhala. Izifundo eziningi zokukhiqiza ezifundwe ngokukhiqiza ama-forksheet ngobuningi obukhulu Zizophinde zisetshenziswe kuma-CFET: kusukela ekuphathweni kwezindonga ezincane zokuvikela ukushisa, kuya ekulawuleni ukucindezeleka, kuya ekuhlanganisweni kwamasango ahlanganyelwe kanye nokuphathwa kweziphambeko ezindaweni ezinabantu abaningi kakhulu.

I-IMC ibeka iforogo lodonga lwangaphandle njenge ukwakheka okuyinhloko kokwandisa isikhathi se-nanosheet ku-node ye-A10Nakuba i-CFET ivuthwa futhi izokwethulwa ngezinga elikhulu kamuva ngawo-2030, empeleni lokhu kusho ukuthi kuma-node amaningana sizobona izakhiwo zihlangana futhi zihlangana: ama-forksheet okuqala ekukhiqizeni, i-CFET emigqeni yokuhlola, i-GAA "yakudala" isesezimakethe eziningi ezingadingi ubuchwepheshe bamuva kakhulu, njll.

Kuxoxwa futhi ngakho uhlobo luni lwama-transistors okufanele uwabeke ohlangothini ngalunye lodonga ezinguqulweni ezahlukene ze-forksheet. Umqondo wokuqala wabeka i-nMOS kolunye uhlangothi kanye ne-pMOS kolunye, njengaku-CMOS yakudala. Kodwa-ke, kucatshangelwa ukucushwa okubeka amadivayisi ohlobo olufanayo kuzo zombili izinhlangothi ukuze kulungiselelwe amaseli athile noma kuthuthukiswe izindlela ezibalulekile, kuye ngezidingo zomklamo kanye nohlobo lwesekethe (i-logic, i-SRAM, ama-oscillator, njll.). Kuze kube namuhla, lokhu kukhetha kusalokhu kuyinsimu evulekile yocwaningo nokwenza ngcono.

Ngibheke phambili eminyakeni ezayo, Ukuzibophezela komkhakha kusobala.Sebenzisa i-forksheet ukugcina ukwanda kobuningi kanye nokusebenza kuphila ngokutshalwa kwezimali okuqhubekayo, futhi ugcine igxathu elikhulu kakhulu lapho ama-CFET esekulungele ngempela futhi amathuluzi okukhiqiza kanye ne-metrology engayisekela ngaphandle kokuncipha kwesivuno.

Konke lokhu kunyakaza okuzungeze ama-forksheet e-transistor kusikisela ukuthi, yize i-physics ibeka imingcele enzima, Kusesenendawo yokuqinisa ama-node angaphansi kuka-2 nmUkuhlanganiswa kwezindonga ze-dielectric eziklanywe kahle, ukulawula ukucindezeleka, izinhlelo ezintsha ze-metrology, kanye nokuvela kancane kancane kwezakhiwo eziqondile kuvula ithuba lokuthi abakhiqizi abanjengoSamsung, kanye nezikhungo zokubhekisela ezifana ne-imec, baqhubeke nokubeka ijubane lobuchwepheshe eminyakeni eyishumi ezayo, uma nje bengaguqula le mibono ibe yimigqa yokukhiqiza ezinzile nenenzuzo.

I-athikili ehlobene:

Indima yezinto ezingavamile zomhlaba esikhathini esizayo sobuchwepheshe